Solubility Interactions in Compensated, Heavily Doped Germanium

Interactions and superconductivity in heavily doped MoS2

We analyze the microscopic origin and the physical properties of the superconducting phase recently observed in MoS2. We show how the combination of the valley structure of the conduction band, the density dependence of the screening of the long-range Coulomb interactions, the short-range electronic repulsion, and the relative weakness of the electron-phonon interactions makes possible the exis...

Tunability and Losses of Mid-infrared Plasmonics in Heavily Doped Germanium Thin Films

Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate heavily n-type doped germanium epilayers grown on different substrates, in-situ doped in the 10 to 10 cm range, by infrared spectroscopy, first principle cal...

Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires

The dependence of the resistivity with changing diameter of heavily-doped self-seeded germanium nanowires was studied for the diameter range 40 to 11 nm. The experimental data reveal an initial strong reduction of the resistivity with diameter decrease. At about 20 nm a region of slowly varying resistivity emerges with a peak feature around 14 nm. For diameters above 20 nm, nanowires were found...

Fabrication of mid-infrared plasmonic antennas based on heavily doped germanium thin films

In this work, the growth and the fabrication of heavily doped germanium plasmonic antennas for mid-infrared applications is reported. By tuning the phosphorus doping concentration and the antenna geometrical parameters, plasma frequencies for targeting the 8-15 μm spectral region are achieved. 1 μm thick, heavily doped (2.3 × 10 cm ) germanium was used to fabricate dipole antennas of 800 nm wid...

Tunability of the Dielectric Function of Heavily Doped Germanium Thin Films for Mid-infrared Plasmonics